Enhance decoding of pre-movement EEG patterns for brain-computer interfaces
The Characteristics and Locking Process of Nonlinear MEMS Gyroscopes
Evaluation of polarization field in InGaN/GaN multiple quantum well struc...
Growth Control of High-Performance InAs/GaSb Type-II Superlattices via Op...
High-Performance Germanium Waveguide Photodetectors on Silicon*
Nanoscale thermal transport across an GaAs/AlGaAs heterostructure interface
Investigation of modulation transfer function in InGaAs photodetector sma...
Seed-mediated growth of heterostructured Cu1.94S-MS (M = Zn, Cd, Mn) and ...
High-performance phosphorene electromechanical actuators
Recent Advances of Two-Dimensional Nanomaterials for Electrochemical Capa...

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors



Author(s): Guo, YY (Guo, Yang-Yan); Han, WH (Han, Wei-Hua); Zhao, XS (Zhao, Xiao-Song); Dou, YM (Dou, Ya-Mei); Zhang, XD (Zhang, Xiao-Di); Wu, XY (Wu, Xin-Yu); Yang, FH (Yang, Fu-Hua)

Source: CHINESE PHYSICS B Volume: 28 Issue: 10 Article Number: 107303 DOI: 10.1088/1674-1056/ab3e68 Published: SEP 2019

Abstract: We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics. There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data, which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance g(m) peak in V-g1 and valley in V-g2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages V-g1 and V-g2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.

Accession Number: WOS:000497719900003

ISSN: 1674-1056

eISSN: 1741-4199

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ab3e68


北京市海淀區清華東路甲35號 北京912信箱 (100083)




[email protected]

版權所有 中國科學院半導體研究所

備案號:京ICP備05085259號 京公網安備110402500052 中國科學院半導體所聲明

在藏区为藏民照相赚钱吗 福建今天快三走势图 今晚六彩现场开奖结果 重庆时时彩走势软件 快乐双彩开奖时间 宁夏11选5手机版 腾讯分分彩在哪里下载 快乐十分专业版下载 快三专家预测和值推荐 青海11选5最大遗漏 吉林快三一定牛快3走势图一定牛