Enhance decoding of pre-movement EEG patterns for brain-computer interfaces
The Characteristics and Locking Process of Nonlinear MEMS Gyroscopes
Evaluation of polarization field in InGaN/GaN multiple quantum well struc...
Growth Control of High-Performance InAs/GaSb Type-II Superlattices via Op...
High-Performance Germanium Waveguide Photodetectors on Silicon*
Nanoscale thermal transport across an GaAs/AlGaAs heterostructure interface
Investigation of modulation transfer function in InGaAs photodetector sma...
Seed-mediated growth of heterostructured Cu1.94S-MS (M = Zn, Cd, Mn) and ...
High-performance phosphorene electromechanical actuators
Recent Advances of Two-Dimensional Nanomaterials for Electrochemical Capa...

Two-dimensional XSe2 (X = Mn, V) based magnetic tunneling junctions with high Curie temperature



Author(s): Pan, LF (Pan, Longfei); Wen, HY (Wen, Hongyu); Huang, L (Huang, Le); Chen, L (Chen, Long); Deng, HX (Deng, Hui-Xiong); Xia, JB (Xia, Jian-Bai); Wei, ZM (Wei, Zhongming)

Source: CHINESE PHYSICS B Volume: 28 Issue: 10 Article Number: 107504 DOI: 10.1088/1674-1056/ab3e45 Published: SEP 2019

Abstract: Two-dimensional (2D) magnetic crystals have attracted great attention due to their emerging new physical phenomena. They provide ideal platforms to study the fundamental physics of magnetism in low dimensions. In this research, magnetic tunneling junctions (MTJs) based on XSe2 (X = Mn, V) with room-temperature ferromagnetism were studied using first-principles calculations. A large tunneling magnetoresistance (TMR) of 725.07% was obtained in the MTJs based on monolayer MnSe2. Several schemes were proposed to improve the TMR of these devices. Moreover, the results of our non-equilibrium transport calculations showed that the large TMR was maintained in these devices under a finite bias. The transmission spectrum was analyzed according to the orbital components and the electronic structure of the monolayer XSe2 (X = Mn, V). The results in this paper demonstrated that the MTJs based on a 2D ferromagnet with room-temperature ferromagnetism exhibited reliable performance. Therefore, such devices show the possibility for potential applications in spintronics.

Accession Number: WOS:000497720500004

ISSN: 1674-1056

eISSN: 1741-4199

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ab3e45


北京市海淀區清華東路甲35號 北京912信箱 (100083)




[email protected]

版權所有 中國科學院半導體研究所

備案號:京ICP備05085259號 京公網安備110402500052 中國科學院半導體所聲明

在藏区为藏民照相赚钱吗 002325股票行情 安徽十一选五走势图 298棋牌游戏下载 股票涨跌幅如何计算 甘肃快三今日推荐跟号 秒速时时彩规律口诀 腾讯分分彩合法吗 北京快三开奖基本走势图带连线 股票行情今天大盘直播 广东快乐10分怎么玩