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Nanoscale thermal transport across an GaAs/AlGaAs heterostructure interface

2020-04-09

 

Author(s): Gorfien, M (Gorfien, Matthew); Wang, HL (Wang, Hailong); Chen, L (Chen, Long); Rahmani, H (Rahmani, Hamidreza); Yu, JX (Yu, Junxiao); Zhu, PF (Zhu, Pengfei); Chen, J (Chen, Jie); Wang, X (Wang, Xuan); Zhao, JH (Zhao, Jianhua); Cao, JM (Cao, Jianming)

Source: STRUCTURAL DYNAMICS-US Volume: 7 Issue: 2 Article Number: 025101 DOI: 10.1063/1.5129629 Published: MAR 2020

Abstract: We studied the thermal transport across a GaAs/AlGaAs interface using time-resolved Reflection High Energy Electron Diffraction. The lattice temperature change of the GaAs nanofilm was directly monitored and numerically simulated using diffusive heat equations based on Fourier's Law. The extracted thermal boundary resistances (TBRs) were found to decrease with increasing lattice temperature imbalance across the interface. The TBRs were found to agree well with the Diffuse Mismatch Model in the diffusive transport region, but showed evidence of further decrease at temperatures higher than Debye temperature, opening up questions about the mechanisms governing heat transfer at interfaces between very similar semiconductor nanoscale materials under highly non-equilibrium conditions.

Accession Number: WOS:000521264800001

PubMed ID: 32206690

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Zhao, Jianhua                  0000-0003-2269-3963

eISSN: 2329-7778

Full Text: https://aca.scitation.org/doi/10.1063/1.5129629



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